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| www..com Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE15P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 210m -16A The GE15P10 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 O A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg Ratings -100 20 -16 -9.8 -64 96 0.77 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.3 62 Unit : /W : /W GE15P10 Page: 1/4 ISSUED DATE :2006/01/19 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -100 -1.0 - Typ. -0.1 8 37 5 15 11 25 56 36 1180 250 75 3.6 Max. -3.0 100 -25 -100 210 60 1900 5 Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=-1mA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VGS= 20V VDS=-100V, VGS=0 VDS=-80V, VGS=0 VGS=-10V, ID=-9A ID=-9A VDS=-80V VGS=-10V VDS=-50V ID=-9A VGS=-10V RG=10 RD=5.6 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Total Gate Charge 2 2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Reverse Recovery Time2 Reverse Recovery Charge Symbol VSD Trr Qrr Min. Typ. 95 410 Max. -1.3 Unit V ns nC Test Conditions IS=-9A, VGS=0V IS=-9A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GE15P10 Page: 2/4 ISSUED DATE :2006/01/19 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GE15P10 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/01/19 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GE15P10 Page: 4/4 |
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